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2009-- : |
Electronics and Information Systems department - Gent University (Belgium)
Administrative responsibilities Scientific manager for the design of reversible circuit in the framework of the "Micropower" project
Research on interfacing reversible circuits with other technologies
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2007-2009 : |
Université Catholique de Louvain - Electromagnetics MIcrowave Communication Laboratory (EMIC) (Belgium) Picoseconds laser integration Study of advanced SOI Transistors Technical and scientific co-teachning and training of a Ph.D Student Study of polymer membranes in the microwave range for full cells applications |
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From 1999 to 2007 S. Burignat was an Assistant Lecturer in the Engineering school CPE-Lyon, France: |
1999-2006 Analog and digital electronics (PW) 3rd year of B.S. 110 h/year 2003-2006 General Physics (PW) 2rd year of B.S. 117 h/year 2004-2007 Physics of devices (DW) 3rd year of B.S. 12 h/year 2004-2007 Introduction to electronics and filtering (DW) 3rd year of B.S. 8 h/year |
2006-2007 : |
Lyon's Institute of Nanotechnologies (INL-France) S. Burignat, Design of elementary circuits using emerging nanodevices. CNRS Postdoctoral Report, CNRS UMR 5511 - Ecole Centrale de Lyon (ECL), (2007), Ecully, France, 62 pages. |
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2004-2006 : |
Collaboration LPM-INSA / InESS Electrical and AFM / EFM Study of capacitive structures with two embedded germanium nanocristal layers. |
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2000-2004 : |
Ph.D Hons. in Integrated Electronics S. Burignat, Transport mechanisms, ultra-low leakage current and retention in non-volatile floating gate memories, Ph.D Thesis,, INSA de Lyon, Decembre 10th 2004, Villeurbanne - France, French.. |
Doc INSA |
1999-2000 : |
M.Sc.Hons. - Reasearch - in Integrated Electronics S. Burignat, Development of the floating gate technique and application to stress induced leakage current (SILCs) measurement in MOS devices, M.Sc. Thesis, National Institute of Applied Sciences of Lyon (INSA), (2000) Villeurbanne - France, French. |
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1998-1999: |
M.Sc.Hons. - Industial - in Electrical Engineering S. Burignat, Design of a vertical power MOS transistor, M.Sc. Thesis, National Institute of Applied Sciences of Lyon (INSA), (1999) Villeurbanne - France, French. |
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1997-1998: |
S. Burignat, Study of bovine serum albumin diatoms for the selection of materials for hip replacement, First year Master Thesis, University Claude Bernard Lyon 1 (UCBL), (1998) Villeurbanne - France, French. |
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© Stéphane BURIGNAT